dsi30-16as single diode standard rectifier 2/4 1 3 part number dsi30-16as backside: cathode fav f vv 1.25 rrm 30 1600 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations to-263 (d2pak) industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20130107a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dsi30-16as v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.29 r 0.9 k/w r min. 30 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 130 p tot 160 w t = 25c c r k/w 30 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.60 t = 25c vj 150 v f0 v 0.82 t = c vj 175 r f 14.1 m ? v 1.25 t = c vj i = a f v 30 1.66 i = a f 60 i = a f 60 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 10 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 300 325 325 315 a a a a 255 275 450 440 1600 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.25 ixys reserves the right to change limits, conditions and dimensions. 20130107a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dsi30-16as ratings product m a r k i n g date code part no. logo assembly code xxxxxxxxx ixys yyww z 000000 assembly line dsi30-12as to-263ab (d2pak) (2) 1200 package t vj c t stg c 150 storage temperature -55 weight g 2 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 60 mounting force with clip 20 i rms rms current 35 a per terminal 175 -40 dsi30-12a dsi30-12ac to-220ac (2) isoplus220ac (2) 1200 1200 DSI30-08As DSI30-08A DSI30-08Ac to-263ab (d2pak) (2) to-220ac (2) isoplus220ac (2) 800 800 800 to-263 ( d2pak ) similar part package voltage class dsi30-16a to-220ac (2) 1600 delivery mode quantity code no. part number marking on product ordering 1 ) dsi30-16as 498378 tape & reel 800 dsi30-16as standard threshold voltage v 0.82 m ? v 0 max r 0 max slope resistance * 11 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130107a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dsi30-16as w c2 a a1 c l e 2x e l1 d 3 2 1 3.81 (0.150) 1.78 (0.07) 2.54 (0.100) 3.05 (0.120) 10.92 (0.430) 9.02 (0.355) mm (inches) recommended min. foot print 3x b2 e1 2x b h d1 supplier option l2 4 minmaxminmax a 4.06 4.83 0.160 0.190 a1 a2 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 d 8.38 9.40 0.330 0.370 d1 8.00 8.89 0.315 0.350 d2 e 9.65 10.41 0.380 0.410 e1 6.22 8.50 0.245 0.335 e e1 h 14.61 15.88 0.575 0.625 l 1.78 2.79 0.070 0.110 l1 1.02 1.68 0.040 0.066 w typ. 0.02 0.040 typ. 0.0008 0.002 dim. millimeter inches typ. 0.10 typ. 0.004 2.41 0.095 0.098 4.28 0.169 all dimensions conform with and/or within jedec standard. 2,54 bsc 0,100 bsc 2.5 2/4 1 3 outlines to-263 (d2pak) ixys reserves the right to change limits, conditions and dimensions. 20130107a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
dsi30-16as 0.001 0.01 0.1 1 100 150 200 250 23456789 0 1 1 0 100 200 300 400 500 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 10 20 30 40 50 60 0102030 0 10 20 30 40 50 0 50 100 150 200 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 0 10 20 30 40 i f [a] v f [v] i fsm [a] t[s] i 2 t [a 2 s] t[ms] p tot [w] i f(av)m [a] t amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current and ambient temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case t[ms] constants for z thjc calculation: ir thi (k/w) t i (s) 10.03 0.0004 2 0.08 0.002 3 0.2 0.003 40.39 0.03 50.2 0.29 t vj = 25c t vj =150c t vj =45c 50 hz, 80% v rrm t vj =45c t vj = 150c v r =0v t vj = 125c 150c r thha : 0.6 k/w 0.8 k/w 1k/w 2k/w 4k/w 8k/w dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 rectifier ixys reserves the right to change limits, conditions and dimensions. 20130107a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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